TSM4806 20v n-channel mosfet 1/6 version: a14 sop-8 key parameter performance parameter value unit v ds 20 v r ds(on) (max) v gs = 4.5v 20 m ? v gs = 2.5v 25 v gs = 1.8v 31 q g 12.3 nc features advanced high cell density trench technology. low gate charge. block diagram application networking dc-dc power system. load switch. ordering information part no. package packing TSM4806cs rlg sop-8 2.5kpcs / 13 reel note: g denotes halogen free product. absolute maximum ratings (t a =25 o c, unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 20 v gate-source voltage v gs 8 v continuous drain current a i d 28 a pulsed drain current b i dm 70 a continuous source current (diode conduction) a,c i s 28 a total power dissipation t a =25 o c p d 2 w storage temperature range t stg -55 to +150 o c operating junction temperature range t j -55 to +150 o c thermal performance parameter symbol limit unit thermal resistance junction to lead r ? jl 40 o c/w thermal resistance junction to ambient r ? ja 62.5 o c/w notes: a. the data tested by surface mounted on a 1 inch 2 fr-4 board with 2oz copper. b. the data tested by pulsed, pulse width 300s, duty cycle 2% surface mounted on fr4 board, t 5s. c. the data is theoretically the same as i d and i dm , in real applications, should be limited by total power dissipation. n-channel mosfet pin definition : 1. source 8. drain 2. source 7. drain 3. source 6. drain 4. gate 5. drain
TSM4806 20v n-channel mosfet 2/6 version: a14 electrical specifications parameter conditions symbol min typ max unit static drain-source breakdown voltage v gs = 0v, i d = 250a bv dss 20 -- -- v gate threshold voltage v ds = v gs , i d = 250a v gs(th) 0.3 0.6 1.0 v gate-source leakage current v gs = 8v, v ds = 0v i gss -- -- 100 na drain-source leakage current v ds = 16v, v gs = 0v i dss -- -- 1 a drain-source on-state resistance v gs = 4.5v, i d = 20a r ds(on) -- 16 20 m ? v gs = 2.5v, i d = 15a -- 20 25 v gs = 1.8v, i d = 10a 25 31 forward transconductance v ds = 5v, i d = 15a g fs -- 27 -- s diode forward voltage i s = 1a, v gs = 0v v sd -- -- 1.2 v dynamic b gate resistance v ds =0v, v gs =0v, f=1mhz r g -- 1.4 2.8 ? total gate charge v ds = 15v, i d = 15a, v gs = 4.5v q g -- 12.3 -- nc gate-source charge q gs -- 1.95 -- gate-drain charge q gd -- 3.08 -- input capacitance v ds = 15v, v gs = 0v, f = 1mhz c iss -- 961 -- pf output capacitance c oss -- 92.3 -- reverse transfer capacitance c rss -- 80.4 -- reverse recovery time i f = 15a, di/dt= 100a/s, t j =25 o c t rr -- 6 -- ns reverse recovery charge q rr -- 1.38 -- nc switching b,c turn-on delay time v dd = 10v, i d = 15a, v gs = 4.5v, r g = 3.3 ? t d(on) -- 3.02 -- ns turn-on rise time t r -- 13.1 -- turn-off delay time t d(off) -- 28 -- turn-off fall time t f -- 8.3 -- notes: a. pulse test: pw 300s, duty cycle 2% b. for design aid only, not subject to production t esting. c. switching time is essentially independent of ope rating temperature.
TSM4806 20v n-channel mosfet 3/6 version: a14 electrical characteristics curve (t a =25 o c, unless otherwise noted) output characteristics on-resistance vs. gate-source voltage source-drain diode forward voltage gate charge normalized v gs(th) vs. t j normalized r dson vs. t j
TSM4806 20v n-channel mosfet 4/6 version: a14 electrical characteristics curve (t a =25 o c, unless otherwise noted) capacitance
TSM4806 20v n-channel mosfet 5/6 version: a14 sop-8 mechanical drawing unit: millimeters marking diagram y = year code m = month code for halogen free product ( o =jan, p =feb, q =mar, r =apl, s =may, t =jun, u =jul, v =aug, w =sep, x =oct, y =nov, z =dec) l = lot code
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